Advanced Patterning for Enabling Next‑Generation Devices
As device geometries shrink, the complexity of patterning required to create the template that defines the features of a device is growing. Patterning approaches have shifted from lithography-reliant bidirectional to unidirectional, with the number of deposition and etch steps increasing significantly.
The animations below illustrate some of the challenges encountered and state‑of‑the‑art patterning techniques used in creating today’s leading‑edge devices.
and Device Scaling
As we progress from 14 to 7nm devices and beyond, SADP and SAQP will be required for some layers and LE with either 193i or EUV lithography for others.
Pitchwalking refers to pitch variation between features; it can degrade performance, power efficiency, or signal integrity.
Self-aligned quadruple patterning effectively decreases the lithography resolution by 4x using a spacer-based patterning approach with one lithography step and two spacer depositions.
Multiple Litho/Etch Creates
High‑Density Cuts and Vias
To cut lines and create vias at densities too high to achieve in one pass, several iterations of lithography and etch are used.
Multi-color patterning is a materials-based approach that minimizes EPE, which is the undesirable movement of an edge in any direction, resulting in shorts, opens, and reduced reliability.
Self-Aligned Multi-Patterning and materials engineering will be major contributors to minimizing EPE, the most critical factor limiting scaling. In the future, 80% of the patterning market will depend on materials‑enabled solutions.
With our breadth and depth of capabilities in materials engineering, Applied Materials systems can address the variations leading to pitchwalking and EPE, thereby enabling the fabrication of the semiconductor industry’s most advanced devices.